In the latest 3DMark Solar Bay Stress Test, the Exynos 2400 manages to impress once again as it beats the Snapdragon 8 Gen 3 in performance stability while running in the smaller Galaxy S24 Plus. In short, Samsung’s latest SoC scores higher than Qualcomm’s latest and greatest silicon.
Snapdragon 8 Gen 3’s performance drops to 48 percent of its actual capability, obtaining a lower score than the Exynos 2400
The Solar Bay Stress Test is similar to 3DMark’s Wild Life Extreme as it pushes smartphone chipsets to their limits by throwing a multitude of CPU and GPU-focused workloads to tackle. In the latest comparison shared by Mochamad Farido Fanani, the test performed by Thai media outlet Beartai reveals that the Exynos 2400 was able to sustain its performance better than the Snapdragon 8 Gen 3, throttling to just 64.6 percent of its actual capability, whereas the Snapdragon 8 Gen 3 suffered immensely, nosediving to 48.3 percent in the same test.
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These results are even more remarkable when we find out that the Snapdragon 8 Gen 3 was tested out on the top-end Galaxy S24 Ultra, which is rumored to feature a vapor chamber that is that 190 percent bigger than the one present in the Galaxy S23 Ultra. Exynos 2400 put on a positive first impression earlier in 3DMark’s Wild Life Extreme Stress Test when it obtained twice the score achieved by the Exynos 2200, with its performance on par with Apple’s A17 Pro.
Though the Galaxy S24 Plus’ cooling solution was pivotal to help keep the Exynos 2400’s temperature under control, it is likely Samsung’s adoption of Fan-out Wafer Level Packaging technology (FOWLP) that improves the new SoC’s heat resistance, leading to an increase in multi-core performance, and therefore, securing better results in the latest test.
With the Exynos 2400 coming out on top in two 3DMark benchmarks, we may see improvements in other tests too, so while we are positively surprised with what Samsung has produced, its silicon is not out of the woods yet.
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